Our ALD Publications Beneq2022-08-24
网页This article describes the atomic layer deposition (ALD) of nickel nitride and nickel thin films using a diamine adduct of Ni (II) chloride, NiCl2 (TMPDA) (TMPDA = N,N,N′,N′,‐tetramethyl‐1,3‐propanediamine), as the metal precursor. The films are grown at low temperatures of 190–250 °C.
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